This work presents the design and testing of a new semiconductor-based pulsed power modulator meeting the challenging requirements of a pulsed electron beam device (GESA): a fast-rising (10^12 V/s) output voltage with arbitrary waveform of maximum 120 kV at a maximum current of 600 A for a pulse duration of up to 100 µs.

This work presents the design and testing of a new semiconductor-based pulsed power modulator meeting the challenging requirements of a pulsed electron beam device (GE ...